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| NTE233 Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec), TL . . . . . . . . . . . . . . . +230C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Pulse Current Gain Collector Saturation Voltage Current Gain-Bandwidth Product Power Gain, Fixed Neutralization Reverse Transfer Capacitance Output Admittance, Input Short Circuit Symbol Test Conditions Min 30 3 - - 20 - 30 300 25 0.6 30 Typ Max - - - - - 0.6 - - - - - - - 50 1 100 - - 700 - 1.1 V V MHz dB pF Unit V V nA A V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO ICEO hFE VCE(sat) fT Gpe Cre goe VCB = 30V, IE = 0 VCE = 30V, IB = 0 IC = 10mA, VCE = 10V, Note 1 IC = 20mA, IB = 0.1mA, Note 1 IC = 10mA, VCE = 10V, f = 100MHz IC = 10mA, VCE = 10V, f = 45MHz IE = 0, VCB = 10V, f 1MHz IC = 10mA, VCE = 10V, f = 45MHz Collector-Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1 200 mho Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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